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| jmnic product specification silicon npn power transistors 2SC3466 description ? with to-3pn package ? high breakdown voltage and high reliability. ? fast switching speed ? wide area of safe operation applications ? switching regulator applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1200 v v ceo collector-emitter voltage open base 650 v v ebo emitter-base voltage open collector 7 v i c collector current 8 a i cm collector current-peak 20 a i b base current 3 a p c collector power dissipation t c =25 ?? 120 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pn) and symbol
jmnic product specification 2 silicon npn power transistors 2SC3466 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ;r be = ?t 650 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 1200 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =4a; i b =0.8a 3.0 v v besat base-emitter saturation voltage i c =4a ;i b =0.8a 1.5 v i cbo collector cut-off current v cb =650v; i e =0 100 | a i ebo emitter cut-off current v eb =5v; i c =0 100 | a h fe-1 dc current gain i c =1a ; v ce =5v 10 40 h fe-2 dc current gain i c =4a ; v ce =5v 6 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 120 pf f t transition frequency i c =1a ; v ce =10v 5 mhz switching times t on turn-on time 1.0 | s t stg storage time 4.0 | s t f fall time i c =4a;r l =50 |? i b1 =0.8a; i b2 =-1.6a v cc =200v 0.7 | s ? h fe-1 classifications k l m 10-20 15-30 20-40 jmnic product specification 3 silicon npn power transistors 2SC3466 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) jmnic product specification 4 silicon npn power transistors 2SC3466 |
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